DB HiTek Expands RF Front-End Business With RF SOI/HRS Process
- Completed Development of 130nm/110nm Technology-Based Process
- Provide World Best Features to Customers with SOI/HRS Process
- Targets Various Applications Such As Wireless Communication Products, Smart Phones/IoT, etc.
SEOUL, South Korea–(BUSINESS WIRE)–DB HiTek had announced to expand the RF front-end business by securing RF SOI (Silicon-on-Insulator) and RF HRS (High Resistivity Substrate) process based on 130nm/110nm technology.
RF front-end is a compulsory product for wireless communication which is responsible for transmit (Tx) and receive (Rx) between IT devices, and applied diversely to the communication areas including smartphones and IoT, etc. Generally, each component such as an antenna tuner, a switch, a low noise amplifier (LNA), and a power amplifier (PA) is assembled on the product.
The importance of RF front-end is gradually increasing while the demand on high-quality communications with high frequency, high-sensibility as the wireless communication technology develops to 5G. Accordingly, the RF front-end market is forecast to have a rapid growth from USD12.4 billion in 2019 to USD21.7 billion in 2025.
Among many parts of the RF front-end, DB HiTek specifically focuses on the switch and LNA (Low Noise Amplifier). The switch is responsible to turn on/off while transmitting/receiving the frequency, and LNA is the core product for high-speed communication like 5G by transferring the more accurate signal as amplifying the frequency.
DB HiTek had drastically improved the features by adding SOI and HRS wafers which blocks or minimize the leakage current to the previous RF bulk process.
Especially, in case of the RF SOI process based on 130nm technology, DB HiTek has the world’s top-class features for switch FOM (Figure of Merit) of 84fs, BV (Breakdown Voltage) of 4.4V. LNA is available to support up to 120GHz Cut-off frequency (Ft), and will be possible to support up to more than 150Ghz within the first half of 2022.
RF HRS (High Resistivity Substrate, >1Kohm) process based on 110nm technology has excellent price competitiveness. The switch FOM is 164fs and BV is 4.6V, and the LNA can support 100GHz Cut-off frequency function. The LNA products of 150GHz or higher are under development for support within the first half of 2022.
DB HiTek is positively set out to customer support to allow fabless customers to enter the RF front-end market at the right time, especially, it quarterly operates MPW to save resources of customer companies.
DB HiTek Co., Ltd.
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